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| BFP136W NPN Silicon RF Transistor 3 For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP136W Maximum Ratings Parameter Marking PAs 1=E Pin Configuration 2=C 3=E 4=B Package SOT343 Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 150 20 1000 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 60C 1) mA mW C Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 90 K/W 1 Jun-22-2001 BFP136W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200 IEBO 1 A ICBO 50 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-22-2001 BFP136W Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 80 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 30 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 80 mA, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order intercept point IC = 80 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz IP3 |S21e|2 9 3 33 Gma 15.5 9.5 F 2 3.3 Ceb 6.8 Cce 0.7 Ccb 1.7 2.5 fT 4 5.5 typ. max. Unit GHz pF dB dBm 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Jun-22-2001 BFP136W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.5813 12.331 1.4254 31.901 1.8821 1.0078 33.904 20.691 4.5579 1.1381 1.0033 0 3 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 113.32 1.4907 86.717 0.033605 0 0.22081 0.71518 0.31338 0 0.31461 0 0 0.99886 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0653 46.37 1.8047 0.83992 0.01636 0.36824 0.10174 2977.4 0.02899 0.75 1.11 300 fA mA - 0.0080864 fA V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.5 0.51 0.18 0.14 0.05 0.35 78 48 244 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-22-2001 nH nH nH nH nH nH fF BFP136W Total power dissipation Ptot = f (TS ) 1200 mW 1000 900 P tot 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W Ptotmax / PtotDC - 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jun-22-2001 BFP136W Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 3.0 7.0 GHz 8V 5V 3V 2V pF 6.0 5.5 5.0 Ccb 2.0 fT 4.5 4.0 1V 1.5 3.5 3.0 0.7V 1.0 2.5 2.0 1.5 0.5 1.0 0.5 0.0 0 2 4 6 8 V 11 0.0 0 20 40 60 80 100 120 140 mA 170 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 18 dB Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 12 dB 10V 3V 10 9 8 10V 3V 2V 14 12 2V G 1V G 7 6 1V 10 8 6 4 2 0 0 0.7V 5 4 0.7V 3 2 1 20 40 60 80 100 120 140 mA 170 0 0 20 40 60 80 100 120 140 mA 170 IC IC 6 Jun-22-2001 BFP136W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz 40 8V IC=80mA dB 0.9GHz dBm 5V 14 IP 3 12 30 3V G 10 8 6 4 0.9GHz 1.8GHz 25 2V 20 1V 15 2 0 0 10 0 2 4 6 8 V 12 20 40 60 80 100 120 mA 160 VCE IC Power Gain Gma , Gms = f(f) VCE = Parameter 34 dB Power Gain |S21|2= f(f) V CE = Parameter 30 dB IC=80mA IC =80mA 28 24 20 24 G 20 16 G 16 12 8 12 4 8 4 0.7V 10V 1V 0 -4 -8 0.0 10V 2V 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f f 7 Jun-22-2001 |
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